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25 October 2018 Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator
T. Aihara, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo
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Proceedings Volume 10823, Nanophotonics and Micro/Nano Optics IV; 1082309 (2018) https://doi.org/10.1117/12.2503433
Event: SPIE/COS Photonics Asia, 2018, Beijing, China
Abstract
High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ~2 dB. 32-Gbps modulation of the MZM was also demonstrated.
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T. Aihara, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, and S. Matsuo "Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator", Proc. SPIE 10823, Nanophotonics and Micro/Nano Optics IV, 1082309 (25 October 2018); https://doi.org/10.1117/12.2503433
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KEYWORDS
Silicon
Molybdenum
Capacitors
Modulation
Phase shifts
Phase shift keying
Waveguides
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