Paper
8 February 2019 Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector
Author Affiliations +
Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 108430A (2019) https://doi.org/10.1117/12.2504959
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
We report on AlGaN/GaN heterostructures ultraviolet (UV) p–i–n photodetectors (PDs) in which generationrecombination and tunneling currents dominate PD leakage at high reverse voltage. At low voltages, the shunt current related to threading dislocations dominate PD leakage. The PD exhibits a narrow bandpass spectral responsivity characteristics from 320 to 360 nm, a zero bias peak responsivity 0.155 A/W at 360 nm, which corresponding to a quantum efficiency of 53%. Additionally, the effect of polarization effect on responsivity of the PD have been investigated.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guosheng Wang, Feng Xie, Jun Wang, Run Wang, Cong Li, and Jin Guo "Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 108430A (8 February 2019); https://doi.org/10.1117/12.2504959
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KEYWORDS
Heterojunctions

Palladium

Ultraviolet radiation

Polarization

Gallium nitride

Photodetectors

Quantum efficiency

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