Presentation + Paper
4 March 2019 A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: role of the strained QWs
J. Souto, J. L. Pura, A. Torres, J. Jimenéz
Author Affiliations +
Proceedings Volume 10900, High-Power Diode Laser Technology XVII; 109000Q (2019) https://doi.org/10.1117/12.2507435
Event: SPIE LASE, 2019, San Francisco, California, United States
Abstract
Strained InGaAs QW lasers present a high power threshold for catastrophic optical damage (COD) as compared to lattice matched AlGaAs QW lasers. The reason for the higher resilience of strained QW lasers is not yet well understood. We analyze the catastrophic optical damage (COD) as a consequence of the dislocations generated by local thermal stresses. The thermomechanical problem is solved for both strained and lattice matched QW lasers. Also, we analyze the role played by point defects in both lasers as root causes of the degradation. The main factors contributing to the robustness of strained QW lasers are discussed.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Souto, J. L. Pura, A. Torres, and J. Jimenéz "A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: role of the strained QWs", Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000Q (4 March 2019); https://doi.org/10.1117/12.2507435
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KEYWORDS
Quantum wells

Indium gallium arsenide

Semiconductor lasers

Arsenic

Temperature metrology

Absorption

Gallium

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