Paper
29 March 2019 The enhancement of the InGaAs solar cells by the thermoelectric generation technology under the continuous laser exposure
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Proceedings Volume 11046, Fifth International Symposium on Laser Interaction with Matter; 110460C (2019) https://doi.org/10.1117/12.2524354
Event: Fifth International Symposium on Laser Interaction with Matter, 2018, Changsha, China
Abstract
The temperature rise of the InGaAs solar cells which under the continuous laser exposure is theoretically calculated, and experimentation,correspondingly designed to bismuth telluride thermoelectric power generation and cooling system,thereby enhancing the overall photovoltaic system integrated photoelectric conversion efficiency.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chengmin Wang, Guangji Li, Hongchao Zhang, and Jian Lu "The enhancement of the InGaAs solar cells by the thermoelectric generation technology under the continuous laser exposure", Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 110460C (29 March 2019); https://doi.org/10.1117/12.2524354
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KEYWORDS
Thermoelectric materials

Solar cells

Indium gallium arsenide

Energy efficiency

Solar energy

Temperature metrology

Carbon dioxide lasers

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