Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission

Tomasz J. Ochalski; Juan S. D. Morales; Shumithira Gandan; Diana L. Huffaker; Hyunseok Kim; Liam O'Faolain

doi:10.1117/12.2529494

12 September 2019 Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission

Tomasz J. Ochalski, Juan S. D. Morales, Shumithira Gandan, Diana L. Huffaker, Hyunseok Kim, Liam O'Faolain

Author Affiliations +

Proceedings Volume 11081, Active Photonic Platforms XI; 110812B (2019) https://doi.org/10.1117/12.2529494
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

In this work, we experimentally study the carrier and refractive index dynamics of InGaAs nanopillar grown on a Si on insulator (SOI) substrate. The recombination process of the InGaAs NP is characterized with different optical techniques. Temperature dependent photoluminescence (PL) at 0.5mW excitation power is carried out to determine the influence of temperature on carrier dynamics. The radiative recombination lifetime has been studied at 7K from time-resolved photoluminescence (TRPL) experiments at a certain excitation power. The optimal combination of pitch (separation between NPs) and diameter in the growth process of this nanostructure has also been measured. These results will contribute to further optimization of the InGaAs nanolaser for integration of III-V optoelectronics on SOI substrates.

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Tomasz J. Ochalski, Juan S. D. Morales, Shumithira Gandan, Diana L. Huffaker, Hyunseok Kim, and Liam O'Faolain "Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission", Proc. SPIE 11081, Active Photonic Platforms XI, 110812B (12 September 2019); https://doi.org/10.1117/12.2529494

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