Paper
17 May 2019 1.2-um InAs/GaAs high-density quantum dot laser
Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hai-Qiao Ni, Yu Zhang, Ying-Qiang Xu, Zhi-Chuan Niu
Author Affiliations +
Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 1117014 (2019) https://doi.org/10.1117/12.2532696
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China
Abstract
Here we report the growth method of InGa/GaAs quantum dot (QD) with differnet QD density by manipulating InAs deposition rate from 0.065 ML/s to 0.1 ML/s. Chose the highest density QD as the active region and grow multilayer InAs/GaAs QD with high uniform. Then fabricate a narrow ridge waveguide laser by semiconductor process. The rigid waveguide is 1.8 um high and 5 um wide, and the cavity length is 1mm. The output power of this narrow-rigid laser is 164 mW and central wavelength is 1204.6 nm when the injection current is 0.5 A at 15°C. The threshold current is as low as 35 mA, and threshold current density is 1939 A/cm2.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hai-Qiao Ni, Yu Zhang, Ying-Qiang Xu, and Zhi-Chuan Niu "1.2-um InAs/GaAs high-density quantum dot laser", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 1117014 (17 May 2019); https://doi.org/10.1117/12.2532696
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KEYWORDS
Quantum dots

Gallium arsenide

Indium arsenide

Chemical species

Quantum dot lasers

Semiconductor lasers

Semiconductors

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