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10 March 2020 Investigation of the surface electronic structure of bulk ZnGa2O4 (Conference Presentation)
Felix Reichmann, Jaroslaw Dabrowski, Zbigniew Galazka, Wolfgang M. Klesse, Mattia Mulazzi
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Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810V (2020) https://doi.org/10.1117/12.2551056
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We present a combined experimental and theoretical investigation on the surface electronic structure of truly bulk ZnGa2O4, a transparent conducting oxide with an ultra-wide band gap of 4.6 eV. Angle-resolved photoelectron spectroscopy, X-ray photoelectron spectroscopy and low-energy electron diffraction were used to analyze the electronic band structure, band bending and surface reconstruction respectively. In combination with density functional theory, the experimental results will be discussed to provide the very first insights on the surface electronic properties of ZnGa2O4, to motivate future investigations.
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Felix Reichmann, Jaroslaw Dabrowski, Zbigniew Galazka, Wolfgang M. Klesse, and Mattia Mulazzi "Investigation of the surface electronic structure of bulk ZnGa2O4 (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810V (10 March 2020); https://doi.org/10.1117/12.2551056
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KEYWORDS
Photoemission spectroscopy
Crystals
Diffraction
Gallium
Thin films
Transparent conducting oxide
X-ray diffraction
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