High speed graphene optoelectronic devices enabled through controlled molecularly doped graphene

Aref Asghari; Hamed Dalir; Volker J. Sorger; Ray T. Chen

doi:10.1117/12.2546801

5 March 2020 High speed graphene optoelectronic devices enabled through controlled molecularly doped graphene

Aref Asghari, Hamed Dalir, Volker J. Sorger, Ray T. Chen

Proceedings Volume 11282, 2D Photonic Materials and Devices III; 1128216 (2020) https://doi.org/10.1117/12.2546801
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Ultra-fast graphene optoelectronic devices require a stable voltage-free doped graphene that is achieved through meticulous molecular surface adsorption in this work. The graphene film resistance is significantly reduced from 40 to less than 10.

Citation Download Citation

Aref Asghari, Hamed Dalir, Volker J. Sorger, and Ray T. Chen "High speed graphene optoelectronic devices enabled through controlled molecularly doped graphene", Proc. SPIE 11282, 2D Photonic Materials and Devices III, 1128216 (5 March 2020); https://doi.org/10.1117/12.2546801

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