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Thick reach-through silicon single-photon avalanche diodes (SPADs) are popular low-noise high efficiency single-photon detectors commonly used in actively quenched detector modules, and are useful at count rates < 10^7 /s. We demonstrate that these devices can achieve significantly higher count rates in a high-speed gating system. With gate durations of approximately 500 ps produced by a 1 GHz sinusoidal bias, we measure a reduction in the average charge per avalanche of more than 100x compared to an actively quenched device, enabling count rates above 10^8 /s without damage. We use a multi-harmonic interferometric readout to detect the minute avalanches at the SPAD anode. In our current setup we observe detection efficiencies above 0.55 (2) at 850 nm at count rates below 10^7 /s, and a count-rate dependent reduction in efficiency at higher rates; at 10^8 /s the efficiency is 0.35 (2). We discuss how to mitigate this effect to achieve higher efficiency at high rates.
Michael A. Wayne,Joshua C. Bienfang, andAlan L. Migdall
"A gated reach-through single-photon avalanche diode detection system capable of 100 million counts per second (Conference Presentation)", Proc. SPIE 11386, Advanced Photon Counting Techniques XIV, 113860M (23 April 2020); https://doi.org/10.1117/12.2558722
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Michael A. Wayne, Joshua C. Bienfang, Alan L. Migdall, "A gated reach-through single-photon avalanche diode detection system capable of 100 million counts per second (Conference Presentation)," Proc. SPIE 11386, Advanced Photon Counting Techniques XIV, 113860M (23 April 2020); https://doi.org/10.1117/12.2558722