Effects Of Applied Voltage On Holographic Storage In SBN:60

Joseph E. Ford; Yoshinao Taketomi; Sing H. Lee; Daniel Bize; R. R. Neurgaonkar; Shaya Fainman

doi:10.1117/12.962139

4 January 1990 Effects Of Applied Voltage On Holographic Storage In SBN:60

Joseph E. Ford, Yoshinao Taketomi, Sing H. Lee, Daniel Bize, R. R. Neurgaonkar, Shaya Fainman

Proceedings Volume 1148, Nonlinear Optical Properties of Materials; (1990) https://doi.org/10.1117/12.962139
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

We characterize the holographic storage characteristics of photorefractive SBN:60 (Sr_0.6Ba_0.4Nb₂O₆) under an externally applied electric field. The field dependence of the recording response time and sensitivity, gain coefficient, steady-state diffraction efficiency, and erasing response time were measured. Kukhtarev's band transport model is shown to predict the asymmetric erase time / write time behavior of SBN:60. Using these results, we estimate as a function of applied field the number of equal diffraction efficiency holograms which can be superimposed in the crystal.

Citation Download Citation

Joseph E. Ford, Yoshinao Taketomi, Sing H. Lee, Daniel Bize, R. R. Neurgaonkar, and Shaya Fainman "Effects Of Applied Voltage On Holographic Storage In SBN:60", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); https://doi.org/10.1117/12.962139

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