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The demonstration of a photo-induced insulator-to-metal transition in vanadium dioxide (VO2) on a picosecond time scale in the mid-1990s foreeshadowed application of this photo-induced phase transition in silicon photonics devices. The talk introduces our current understanding of the phase-transition physics, but focuses on our recent demonstrations of sub-picosecond switching of cw and ultrafast signal pulses in silicon and silicon nitride waveguides. Direct in-line modulation of signal pulses achieves only modest contrast ratios. However, similar switching strategies deploying VO2 on resonant structures promise substantially higher contrast with smaller switching energies in silicon photonic structures with micron-scale form factors.
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Richard F. Haglund Jr., Sharon M. Weiss, "Exploiting the VO2 metal-insulator transition in nanoscale optical devices," Proc. SPIE 11694, Photonic and Phononic Properties of Engineered Nanostructures XI, 116941T (9 March 2021); https://doi.org/10.1117/12.2589958