Bound states in the continuum in silicon integrated photonic devices

Sang-Yeon Cho; Stephen Anderson; Weimin Zhou

doi:10.1117/12.2580721

5 March 2021 Bound states in the continuum in silicon integrated photonic devices

Sang-Yeon Cho, Stephen Anderson, Weimin Zhou

Proceedings Volume 11695, High Contrast Metastructures X; 1169518 (2021) https://doi.org/10.1117/12.2580721
Event: SPIE OPTO, 2021, Online Only

Abstract

We present numerical modeling and experimental characterization of the photonic bound states in high-contrast Si-based subwavelength grating waveguide structures. The resonant modes in the grating waveguides show some of the unique features of the photonic bound states in the continuum: continuous narrowing of the resonance linewidth and cancellation of radiative waves. The calculated field distributions show strong internal field buildup around resonances. To verify our simulation results, a Si-based subwavelength grating waveguide was fabricated and experimentally characterized. The measured reflection spectra show two resonance peaks around λ₀ = 1490 nm and λ₀ = 1505 nm. According to the simulated results, these two peaks are located near a BIC condition. The captured infrared microscope images in the reflection measurement reveal the dynamical interaction between the incident light and the subwavelength grating waveguide. The demonstrated Si grating waveguides has potential to be used as highly efficient frequency-selective couplers between free-space optical waves to in-plane guided optical waves in existing Si integrated photonic circuits.

Conference Presentation

Citation Download Citation

Sang-Yeon Cho, Stephen Anderson, and Weimin Zhou "Bound states in the continuum in silicon integrated photonic devices", Proc. SPIE 11695, High Contrast Metastructures X, 1169518 (5 March 2021); https://doi.org/10.1117/12.2580721

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