Effects of rapid thermal annealing on Cr/Si/Pt Schottky photodetector in the mid-infrared regime

Yu-Hao Li; Ching-Fuh Lin

doi:10.1117/12.2608433

4 March 2022 Effects of rapid thermal annealing on Cr/Si/Pt Schottky photodetector in the mid-infrared regime

Yu-Hao Li, Ching-Fuh Lin

Proceedings Volume 11990, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022; 1199008 (2022) https://doi.org/10.1117/12.2608433
Event: SPIE LASE, 2022, San Francisco, California, United States

Abstract

In order to enable the silicon photoelectric detector to be easily integrated with CMOS components in the circuit, which is necessary for commercial demand, the thin film structure on the surface can enhance the electrical and optical characteristics of the devices. Here we have used metal nanoscale thin film structure to study the electrical and optical performance in silicon-based detector. We deposited a thin film of Cr on n-type Silicon (n-Si) with an electron-beam evaporator. The main purpose of this step is to generate the active layer on device, and this was followed by annealing using rapid thermal processer in temperature range from 500°C to 700°C. The performed experiments shows that the device use IPE effect to collect hot carriers and by rapid thermal annealing, allowing carriers to easily cross over and generate detection signals.

Conference Presentation

Citation Download Citation

Yu-Hao Li and Ching-Fuh Lin "Effects of rapid thermal annealing on Cr/Si/Pt Schottky photodetector in the mid-infrared regime", Proc. SPIE 11990, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022, 1199008 (4 March 2022); https://doi.org/10.1117/12.2608433

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