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5 March 2022 A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures
Alper Şahin, Musa Selim Gül, Fatih Uzgur, Serdar Kocaman
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Proceedings Volume 12009, Quantum Sensing and Nano Electronics and Photonics XVIII; 1200904 (2022) https://doi.org/10.1117/12.2610186
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 μm and 2.5 μm. InP based epilayer design consists of a compositionally graded quaternery InAlGaAs barrier region sandwiched between lattice matched InGaAs absorber and extended InGaAs absorber. In this study, we also provide a comparison between suggested nBn structure and a relatively usual npn InGaAs structure, using the same computational environment.
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Alper Şahin, Musa Selim Gül, Fatih Uzgur, and Serdar Kocaman "A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures", Proc. SPIE 12009, Quantum Sensing and Nano Electronics and Photonics XVIII, 1200904 (5 March 2022); https://doi.org/10.1117/12.2610186
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KEYWORDS
Short wave infrared radiation
Doping
Indium gallium arsenide
Photodetectors
Sensors
Infrared radiation
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