Presentation + Paper
3 March 2022 Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Matteo Buffolo, Nicola Roccato, Francesco Piva, Carlo De Santi, Riccardo Brescancin, Claudia Casu, Alessandro Caria, Kalparupa Mukherjee, Camille Haller, Jean Francois Carlin, Nicolas Grandjean, Marco Vallone, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Giovanni Verzellesi, Mauro Mosca, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Author Affiliations +
Abstract
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matteo Buffolo, Nicola Roccato, Francesco Piva, Carlo De Santi, Riccardo Brescancin, Claudia Casu, Alessandro Caria, Kalparupa Mukherjee, Camille Haller, Jean Francois Carlin, Nicolas Grandjean, Marco Vallone, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Giovanni Verzellesi, Mauro Mosca, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini "Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics", Proc. SPIE 12022, Light-Emitting Devices, Materials, and Applications XXVI, 120220G (3 March 2022); https://doi.org/10.1117/12.2606599
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KEYWORDS
Light emitting diodes

Quantum wells

Gallium nitride

Indium gallium nitride

Semiconductors

Reliability

External quantum efficiency

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