Laser probing of III-V semiconductor growth on Si(100)

Stephen R. Leone

doi:10.1117/12.17865

1 July 1990 Laser probing of III-V semiconductor growth on Si(100)

Stephen R. Leone

Proceedings Volume 1208, Laser Photoionization and Desorption Surface Analysis Techniques; (1990) https://doi.org/10.1117/12.17865
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Investigations of III-V semiconductor growth by laser probing of the gas phase constituents represents a potential new technique for monitoring and improving molecular beam epitaxy . Laser-induced fluorescence (LJF) detection methods have now been devised to measure directly the number density of Ga and In atoms and As2 dimer species during the deposition and growth. The studies here are applied to the early stages of growth of 111-V materials on Si(100). Additional techniques may be employed in the future to detect species such as As₄ , P₄ , and other minor dopants in various molecular forms. Laser detection is used here to make measurements on scattering and sticking coefficients, the rates and energetics of desorbing species, and state-resolved accommodation. Important islanding behavior is detected by measurements of the kinetics for certain constituents in the presence of others. These techniques will be of value in devising practical in situ optical diagnostics for molecular beam epitaxy of III-V semiconductor devices.

Citation Download Citation

Stephen R. Leone "Laser probing of III-V semiconductor growth on Si(100)", Proc. SPIE 1208, Laser Photoionization and Desorption Surface Analysis Techniques, (1 July 1990); https://doi.org/10.1117/12.17865

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