Polarization-dependent gain and gain saturation in strained semiconductor lasers

Ben-mou Yu; Jia-ming Liu; Joanne S. LaCourse

doi:10.1117/12.18280

1 May 1990 Polarization-dependent gain and gain saturation in strained semiconductor lasers

Ben-mou Yu, Jia-ming Liu, Joanne S. LaCourse

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18280
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Various power-versus-current characteristics of TE and TM emission from 1.3-pm InGaAsP/InP semiconductor lasers are observed. They are categorized into the single-plarization lasers, the two-polarization coexisting lasers, and the two-polarization switching lasers. A polarization-related rate-equation model with self-saturation and crosssaturation terms are proposed to simulate these measurements. Emission of only one polarization is explained by large difference of gain and loss between the two polarization modes. Coexisting or switching of both polarizations is determined by the self-saturation and cross-saturation of the gain of the two polarization. The rate equation model is justified by the strain-dependent susceptibility. Several possible sources of strain are the slight lattice-mismatch, the superficial silicon-dioxide, and the die bonding and handling.

Citation Download Citation

Ben-mou Yu, Jia-ming Liu, and Joanne S. LaCourse "Polarization-dependent gain and gain saturation in strained semiconductor lasers", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18280

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