Paper
8 July 2022 Research on empirical tight-binding method calculation energy band of InAs/InAsSb superlattice
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Abstract
In this article, the band structures of InAs/InAsSb superlattices are calculated by sp3s* model, which is based on empirical tight-bonding method (ETBM). First, the band structures of InAs/InAsSb superlattice with varies period are calculated, the calculated bandgap results are consistent with experiment values. The conduction band edge (Ec level) for the two sets of InAs/InAsSb T2SLs are approximately independent of the cutoff wavelength (or band gap), and they are significantly lower than the conduction band edges of InAs/GaSb. The relationship between periodic structure and cutoff wavelength is obtained under the condition of strain balance. Then the holes effective mass at Γ point of mini-band along the growth direction for different structure InAs/InAsSb superlattice are derived. Finally, the composition segregation function is included in our model in order to study the impact of Sb segregation on InAs/InAsSb superlattice. These material parameters obtained from our calculated results can be used in the design of T2SL-based IR detectors.
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Jiang Zhi, Jun-bin Li, Li-bin Tang, Yan-hui Li, Xu-chang Zhou, Jin-cheng Kong, and Dong-sheng Li "Research on empirical tight-binding method calculation energy band of InAs/InAsSb superlattice", Proc. SPIE 12284, 2021 International Conference on Optical Instruments and Technology: IRMMW-THz Technologies and Applications, 122840C (8 July 2022); https://doi.org/10.1117/12.2619369
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KEYWORDS
Superlattices

Antimony

Indium arsenide

Gallium antimonide

Long wavelength infrared

Mid-IR

Absorption

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