Poster + Paper
17 March 2023 Silicon nitride hybrid-integrated diode laser at 637 nm
Lisa V. Winkler, Kirsten Gerritsma, Albert van Rees, Philip P. J. Schrinner, Marcel Hoekman, Ronald Dekker, Peter J. M. van der Slot, Christian Nölleke, Klaus-J. Boller
Author Affiliations +
Conference Poster
Abstract
We present a hybrid-integrated extended cavity diode laser tunable around 637 mn, with a total tuning range of 8 nm, allowing to address the zero-phonon line of nitrogen vacancy centers. The laser provides wide mode-hop free tuning over 43.6 GHz and a narrow intrinsic linewidth below 10 kHz. The maximum output power is 2.5 mW in a single-mode fiber, corresponding to an on-chip power of 4.0 mW. The laser is assembled in a standard laser housing and fiber-pigtailed.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lisa V. Winkler, Kirsten Gerritsma, Albert van Rees, Philip P. J. Schrinner, Marcel Hoekman, Ronald Dekker, Peter J. M. van der Slot, Christian Nölleke, and Klaus-J. Boller "Silicon nitride hybrid-integrated diode laser at 637 nm", Proc. SPIE 12424, Integrated Optics: Devices, Materials, and Technologies XXVII, 124241K (17 March 2023); https://doi.org/10.1117/12.2667809
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KEYWORDS
Semiconductor lasers

Laser resonators

Laser frequency

Emission wavelengths

Silicon nitride

Laser bonding

Quantum photonics

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