Transport properties of V1-xWxO2 around the metal insulator transition temperature

G. Naziripour; E. Shin; G. Subramanyam; N. R. Dilley; S. Ramanarhan; G. Farlow; V. Vasiliev; B. Claflin; D. Look

doi:10.1117/12.2647148

31 January 2023 Transport properties of V_1-xW_xO₂ around the metal insulator transition temperature

G. Naziripour, E. Shin, G. Subramanyam, N. R. Dilley, S. Ramanarhan, G. Farlow, V. Vasiliev, B. Claflin, D. Look

Proceedings Volume 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022; 124770A (2023) https://doi.org/10.1117/12.2647148
Event: International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, 2022, Boston, Massachusetts, United States

Abstract

The transport properties of W-doped thermochromic V_1-xW_xO₂ (x=0 and 0.0074) thin films prepared by pulsed laser deposition were studied to understand the effect of doping on the electrical properties of these films. Temperature dependent magneto-transport measurements (Hall effect) in magnetic fields up to 9 Tesla were performed on thin film vanadium dioxide (VO₂) across the Mott metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at MIT. The Hall mobility varies little across the MIT and remains low at ~ 0.05 cm² /V sec. The majority carriers are electrons. Magneto-resistance is small and positive. Comparison of the three Hall parameters including carrier concentration, conductivity and mobility between various doping levels on both metallic and insulating state are reported and a model has been proposed. A correlation between carrier concentration and conductivity of VO₂ films is observed but doesn’t exist between carrier concentration and mobility.

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G. Naziripour, E. Shin, G. Subramanyam, N. R. Dilley, S. Ramanarhan, G. Farlow, V. Vasiliev, B. Claflin, and D. Look "Transport properties of V_1-xW_xO₂ around the metal insulator transition temperature", Proc. SPIE 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022, 124770A (31 January 2023); https://doi.org/10.1117/12.2647148

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KEYWORDS

Transition metals

Thin films

Electrical properties

Metals

Resistance

Vanadium

Doping

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