Design and fabrication of a TE-pass polarizer based on silicon nitride optical waveguide

Siyang Zhou; Zhongwen Wang; Jian-Jun He

doi:10.1117/12.2656995

27 December 2022 Design and fabrication of a TE-pass polarizer based on silicon nitride optical waveguide

Siyang Zhou, Zhongwen Wang, Jian-Jun He

Proceedings Volume 12504, International Symposium on Silicon-based Optoelectronics (ISSBO 2022); 1250407 (2022) https://doi.org/10.1117/12.2656995
Event: International Symposium on Silicon-based Optoelectronics (ISSBO 2022), 2022, Hangzou, China

Abstract

An on-chip TE-pass polarizer working near 850nm band is designed and fabricated on silicon nitride platform. The structure is very simple, using a straight silicon nitride waveguide separated from a metal strip by a low index silicon oxide spacer layer. By optimizing the thickness of the spacer layer, the metal strip introduces more loss for TM mode than TE mode. The measured extinction ratio of the fabricated device is around 20dB over a 16nm wavelength range from 837nm to 853nm for a 3mm-long polarizer.

Citation Download Citation

Siyang Zhou, Zhongwen Wang, and Jian-Jun He "Design and fabrication of a TE-pass polarizer based on silicon nitride optical waveguide", Proc. SPIE 12504, International Symposium on Silicon-based Optoelectronics (ISSBO 2022), 1250407 (27 December 2022); https://doi.org/10.1117/12.2656995

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