Paper
1 June 1990 Quantitative evaluation method for practical resolution by integration factor in optical lithography
Hiroshi Ohtsuka, Kazutoshi Abe, Takeshi Taguchi
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Abstract
The requirement for the accurate evaluation of the practical resolution is increased to determine the effective range for pattern generation on actual devices. In the most of evaluation method the area of focus and exposure latitude for the CD control is applied to indicate the degree of practical resolution capability to the specified CD tolerance. However the evaluation results of arbitral pattern size is directly indicated as the resolution of mask dimension regardless to the existence of transfer bias and this indication produces the difference of pattern density between mask and resist. In this paper the requirement of optimization for objective CD is demonstrated from the relationship of transfer bias and pattern density by using of the simplified evaluation method of Focus Exposure Triangle. And finally the more accurate evaluation results are obtained by correcting the pattern density to the mask applying the new determination method for the optimum transfer bias correction. 1 .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Ohtsuka, Kazutoshi Abe, and Takeshi Taguchi "Quantitative evaluation method for practical resolution by integration factor in optical lithography", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); https://doi.org/10.1117/12.20214
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KEYWORDS
Spatial frequencies

Tolerancing

Optical lithography

Field effect transistors

Photomasks

Spatial resolution

Critical dimension metrology

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