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24 November 2023 Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors
Marnix Vreugdenhil, Dries van Oosten
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Proceedings Volume 12726, Laser-Induced Damage in Optical Materials 2023; 1272609 (2023) https://doi.org/10.1117/12.2685122
Event: SPIE Laser Damage, 2023, Dublin/Livermore, California, United States
Abstract
We experimentally study single-shot laser ablation of GaSb, GaAs, GaP and GaN, for laser pulse durations ranging from 200 fs to 20 ps. We find that the laser ablation threshold fluence of GaSb is almost independent of pulse duration, whereas the ablation threshold for GaN depends strongly on pulse duration. More generally we find that the larger the bandgap, the stronger the dependence of pulse duration. This is expected, as intrinsic laser absorption is mainly linear when the bandgap is small compared to the photon energy, whereas a larger bandgap requires strong field ionization. Thus a larger bandgap leads to a stronger influence of the peak intensity of the pulse and therefore a stronger dependence on the pulse duration, when compared to smaller bandgaps.
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(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Marnix Vreugdenhil and Dries van Oosten "Pulse duration dependence of single-shot pulsed laser ablation of gallium based III-V compound semiconductors", Proc. SPIE 12726, Laser-Induced Damage in Optical Materials 2023, 1272609 (24 November 2023); https://doi.org/10.1117/12.2685122
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KEYWORDS
Laser ablation
Gallium nitride
Gallium antimonide
Picosecond phenomena
Pulsed laser operation
Gallium arsenide
Laser damage threshold
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