Reactive low-voltage ion plating of hard silicon nitride optical thin films and their characterization

Juergen Ramm; Ralf Hora; Bertrand G. Bovard

doi:10.1117/12.20521

1 August 1990 Reactive low-voltage ion plating of hard silicon nitride optical thin films and their characterization

Juergen Ramm, Ralf Hora, Bertrand G. Bovard

Proceedings Volume 1275, Hard Materials in Optics; (1990) https://doi.org/10.1117/12.20521
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Silicon nitride films were synthesized in a Balzers BAP 800 coating plant by an plasma enhanced evaporation process. Transparent, stoichiometric films free of hydrogen, oxygen, argon, and heavy metals were obtained. The optical properties, the chemical composition, the microhardness, the structure, and the morphology of the films were investigated.

Citation Download Citation

Juergen Ramm, Ralf Hora, and Bertrand G. Bovard "Reactive low-voltage ion plating of hard silicon nitride optical thin films and their characterization", Proc. SPIE 1275, Hard Materials in Optics, (1 August 1990); https://doi.org/10.1117/12.20521

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