Paper
1 August 1990 Dynamics of nonthermal intrinsic excitons in GaAs quantum wells
Theodore C. Damen, Jagdeep Shah, Daniel Y. Oberli, Daniel S. Chemla, John E. Cunningham
Author Affiliations +
Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20712
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We have investigated the formation of intrinsic excitons following excitation of electron-hole pairs close to the bandgap by a subpicosecond laser pulse. We show that excitons form very rapidly ('c≤2Ops) and that they are initially in large wavevector states because of energy and momentum conservation requirements. These non-thermal excitons then interact with other excitons and acoustic phonons and relax very slowly (400ps) to the KO states which couple directly to light. This leads to an extremely slow rise of exciton luminescence and unusual dependence of this risetime on temperature, excitation density and excitation energy. These studies raise a number of fundamental issues related to excitons in semiconductors.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theodore C. Damen, Jagdeep Shah, Daniel Y. Oberli, Daniel S. Chemla, and John E. Cunningham "Dynamics of nonthermal intrinsic excitons in GaAs quantum wells", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20712
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KEYWORDS
Excitons

Luminescence

Phonons

Picosecond phenomena

Semiconductors

Laser beam diagnostics

Photons

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