Role of point defect diffusion and recombination in low-temperature growth of semiconductor heterostructures using low-energy ion beams

Olivier Vancauwenberghe; Nicole Herbots; Olof C. Hellman

doi:10.1117/12.20805

1 October 1990 Role of point defect diffusion and recombination in low-temperature growth of semiconductor heterostructures using low-energy ion beams

Olivier Vancauwenberghe, Nicole Herbots, Olof C. Hellman

Author Affiliations +

Proceedings Volume 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors; (1990) https://doi.org/10.1117/12.20805
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We are investigating dircctdeposition oflow energy (10 - 500 eV) ions to grow elemental and compound thin films at low temperature (R.T. - 700 K). We have developed a model to describe layer growth by Ion Beam Deposition (IBD) that takes into account not only atomic collision processes but also thermally-activated diffusion and recombination ofpoint defects during ion bombardment. Numerical simulations of our experimental conditions using this model have given us new insight into growth mechanisms during IBD. More specifically, we show in this work that the IBD growth rate is not limited by the sputtering yield only, but also by the recombination rate ofpoint defects at the surface; this rate depends on the depth distribution of the defects, which is deternined by the ion energy.

Citation Download Citation

Olivier Vancauwenberghe, Nicole Herbots, and Olof C. Hellman "Role of point defect diffusion and recombination in low-temperature growth of semiconductor heterostructures using low-energy ion beams", Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20805

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