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12 March 2024 Cr:LiSAF DFC chip for high power and broadband tiny integrated laser
Florent Cassouret, Takunori Taira
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Proceedings Volume 12864, Solid State Lasers XXXIII: Technology and Devices; 128640N (2024) https://doi.org/10.1117/12.3003293
Event: SPIE LASE, 2024, San Francisco, California, United States
Abstract
In this work we present a novel Distributed Face Cooling (DFC) chip based on interlayer surface activated (il-SAB) bounding at room temperature of Cr3+:LiSrAlF6 (Cr:LiSAF) and high thermal conductivity Sapphire in order to power scale the broadband visible emission of Cr:LiSAF. Preliminary calculations reveals an over seven time improvement of effective thermal conductivity of the DFC chip (17.5 W/mK) compared to Cr:LiSAF bulk (2.5 W/mK), resulting in better thermal management inside the gain medium even under 100 W diode pumping at 675 nm. Simulations shows a drastic drop of Cr:LiSAF temperature inside the DFC chip (47°C) compared to same gain length bulk crystal (260°C) in the same pumping conditions. Using linear plano-concave laser cavity (1 % output coupler mirror with 100 mm curvature), over 44 W laser output power can be expected at 810 nm with a laser threshold of 16.1 W using the designed DFC chip.
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Florent Cassouret and Takunori Taira "Cr:LiSAF DFC chip for high power and broadband tiny integrated laser", Proc. SPIE 12864, Solid State Lasers XXXIII: Technology and Devices, 128640N (12 March 2024); https://doi.org/10.1117/12.3003293
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KEYWORDS
Crystals
Sapphire
Thermal effects
Temperature distribution
High power lasers
Diode pumped solid state lasers
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