Effect of metal/semiconductor contact size on the annealing parameters of ohmic contract

Jianhua Ren; Jun Han; TianYu Sun; Yanhui Xing; Zheng Xing; Guannan Lv; Baoshun Zhang

doi:10.1117/12.3008112

21 December 2023 Effect of metal/semiconductor contact size on the annealing parameters of ohmic contract

Jianhua Ren, Jun Han, TianYu Sun, Yanhui Xing, Zheng Xing, Guannan Lv, Baoshun Zhang

Proceedings Volume 12966, AOPC 2023: AI in Optics and Photonics ; 129662A (2023) https://doi.org/10.1117/12.3008112
Event: Applied Optics and Photonics China 2023 (AOPC2023), 2023, Beijing, China

Abstract

Ohmic contact is an important expression of the energy band change after metal-semiconductor contact. This paper summarizes the prerequisites and methods for achieving ohmic contact in the experimental process. This paper sums up in detail the several important factors affecting the formation of ohmic contact during the experimental process, including annealing temperature and time, epitaxial method, type of semiconductor contact layer and doping concentration, type and thickness of the metal contact layer, and size of the metal/semiconductor contact area, etc. We propose a simple and effective method to find the appropriate annealing temperature and time by determining the under-annealing and over annealing states of ohmic contact during the annealing process through a Ring Transmission Line Model. Through extensive experimental verification, the theoretical reasoning matches well with the experimental results. This has a tremendous role in Improving experimental efficiency.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jianhua Ren, Jun Han, TianYu Sun, Yanhui Xing, Zheng Xing, Guannan Lv, and Baoshun Zhang "Effect of metal/semiconductor contact size on the annealing parameters of ohmic contract", Proc. SPIE 12966, AOPC 2023: AI in Optics and Photonics , 129662A (21 December 2023); https://doi.org/10.1117/12.3008112

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