Fully integrated Schottky array: a new generation of metal silicide infrared detectors

Ulrich Theden; Martin A. Green; John W. V. Storey; Jerzy M. Kurianski

doi:10.1117/12.21746

1 September 1990 Fully integrated Schottky array: a new generation of metal silicide infrared detectors

Ulrich Theden, Martin A. Green, John W. V. Storey, Jerzy M. Kurianski

Proceedings Volume 1308, Infrared Detectors and Focal Plane Arrays; (1990) https://doi.org/10.1117/12.21746
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

A proposal for a metal-silicide full Schottky IR detector array is presented. IR detection and charge transfer are conducted with metal silicide gates which lie directly on silicon, and a detector array designed as a frame transfer device. A half-Schottky CCD was developed to probe the concept, with one phase gate built as a Schottky silicide gate. A more advanced version with higher fill factors was also tested. IR sensitive Schottky CCD gates are connected to nonsensitive Schottky CCD gates, allowing frame storage; line by line readouts are made through a Schottky gate readout CCD. A new method for submicron patterning between the metal Schottky gates is presented to develop the fully integrated version. IR detection is facilitated by the use of low Schottky barrier height silicides, while non-IR-sensitive storage CCDs and readout CCDs use metal silicides with high Schottky barrier heights. The device is demonstrated to be highly radiation-resistant, with built-in antiblooming capacity, and the charge handling capacity is higher than that of conventional devices because no gate oxides are utilized.

Citation Download Citation

Ulrich Theden, Martin A. Green, John W. V. Storey, and Jerzy M. Kurianski "Fully integrated Schottky array: a new generation of metal silicide infrared detectors", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); https://doi.org/10.1117/12.21746

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