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1 March 1991 Electrical and optical properties of As- and Li-doped ZnSe films
Kurt Hingerl, Jarmo Lilja, Mika Toivonen, Markus Pessa, Wolfgang Jantsch, Donat Josef As, W. Rothemund, P. Juza, Helmut Sitter
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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24321
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Luminescense and photoconductivity measurements were performed on MBE grown ZnSe layers with various arsenic concentrations. Two shallow acceptor levels with energies of 125 meV and 260 meV were found. Increasing the As content in order to increase the number of shallow acceptor states resulted in highly compensated samples. For Li the acceptor binding energy was found to be 113 meV. Also in the case of Li a higher doping concentration did not augment the shallow levels. Electrical characterization of the Li doped samples was done by C-V and I-V measurements. The films were found to be p-type.
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Kurt Hingerl, Jarmo Lilja, Mika Toivonen, Markus Pessa, Wolfgang Jantsch, Donat Josef As, W. Rothemund, P. Juza, and Helmut Sitter "Electrical and optical properties of As- and Li-doped ZnSe films", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24321
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KEYWORDS
Lithium
Optical properties
Arsenic
Doping
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