New thermistor material for thermistor bolometer: material preparation and characterization

P. Umadevi; C. L. Nagendra; G. K. M. Thutupalli; K. Mahadevan; G. Yadgiri

doi:10.1117/12.46515

1 August 1991 New thermistor material for thermistor bolometer: material preparation and characterization

P. Umadevi, C. L. Nagendra, G. K. M. Thutupalli, K. Mahadevan, G. Yadgiri

Proceedings Volume 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches; (1991) https://doi.org/10.1117/12.46515
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

Structural, electrical, and infrared optical properties of screen-printed vanadium oxide thick films have been studied. It is seen that the original starting material, in the form of V₂O₃, undergoes a global transformation to its next higher oxide V₂O₅ during firing. This has been confirmed through differential thermal analysis (DTA) and x-ray diffraction analysis. The crystalline morphology of the transformed V₂O₅ seems to improve as a function of firing temperature in the range of 400- 600 degree(s)C. The associated screen-printed resistors have temperature coefficient of resistance in the range of -37,000 to -17,000 ppm per K over a temperature range of -65 to +155 degree(s)C and thermistor constant equal to 2000 K, which are independent of firing temperature. It is observed that both electrical resistivity and infrared emissivity decreases with increase of firing temperature, attaining values 1.12 X 10² ohm cm for electrical resistivity and 82% for infrared emissivity at a firing temperature of 550 degree(s)C.

Citation Download Citation

P. Umadevi, C. L. Nagendra, G. K. M. Thutupalli, K. Mahadevan, and G. Yadgiri "New thermistor material for thermistor bolometer: material preparation and characterization", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46515

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