Light scatter variations with respect to wafer orientation in GaAs

Jeff L. Brown

doi:10.1117/12.50519

1 December 1991 Light scatter variations with respect to wafer orientation in GaAs

Jeff L. Brown

Proceedings Volume 1530, Optical Scatter: Applications, Measurement, and Theory; (1991) https://doi.org/10.1117/12.50519
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Attempting to determine the quality and uniformity of a smooth surface from examination of BRDF raster scans can be a risky business as evidenced by studies of commercially grown and polished GaAs wafers. To demonstrate this, raster scan variations with respect to wafer orientation are presented along with a method for analyzing these variations without the need for making multiple raster scans. Some possible sources of the orientational variations are indicated by the data.

Citation Download Citation

Jeff L. Brown "Light scatter variations with respect to wafer orientation in GaAs", Proc. SPIE 1530, Optical Scatter: Applications, Measurement, and Theory, (1 December 1991); https://doi.org/10.1117/12.50519

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