Paper
1 November 1991 Advances in multiple-quantum-well IR detectors
Walter L. Bloss, Michael J. O'Loughlin, Mary Rosenbluth
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Abstract
The performance of GaAs/AlGaAs multiple quantum well long-wavelength infrared detectors is evaluated for potential applications in focal plane arrays. A number of GaAs/AlGaAs quantum well infrared detectors with absorption between 7 to 12 micrometers have been fabricated and characterized. In these samples, the quantum well width and barrier height were held approximately constant, while the AlGaAs barrier thickness was varied from 300 to 500 angstrom. These detectors were characterized by FTIR absorption, dark current, responsivity, spectral noise density, and thermal activation energy measurements at temperatures ranging from 6 to 80 K. A maximum detectivity of 4 X 1013 cm(root)Hz/W at 6 K is obtained at (lambda) equals 8.4 micrometers for the 500 angstrom barrier sample.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Walter L. Bloss, Michael J. O'Loughlin, and Mary Rosenbluth "Advances in multiple-quantum-well IR detectors", Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); https://doi.org/10.1117/12.49314
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Cited by 1 scholarly publication.
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KEYWORDS
Sensors

Quantum wells

Infrared sensors

Infrared detectors

Absorption

Gallium arsenide

FT-IR spectroscopy

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