Characteristics and reliability of high temperature strained quantum well lasers

Chi-Shain Hong; Richard J. Fu; Luis Figueroa

doi:10.1117/12.59166

26 June 1992 Characteristics and reliability of high temperature strained quantum well lasers

Chi-Shain Hong, Richard J. Fu, Luis Figueroa

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59166
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

InGaAs/GaAs strained-layer quantum well lasers have been successfully demonstrated for very high temperature CW operation up to 200 C. The lasers show promising reliability data at 70 C, 100 C, and 125 C and high output power of about 300 mW with a 3-micron ridge-waveguide structure.

Citation Download Citation

Chi-Shain Hong, Richard J. Fu, and Luis Figueroa "Characteristics and reliability of high temperature strained quantum well lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59166

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available