Paper
26 June 1992 Improved LPE regrowth process of high-power InGaAsP/InP single-lobe operation BH lasers
Alexander V. Ovchinnikov, Igor E. Berishev, Dmitry Z. Garbuzov, Yu V. Ipyin, Natal'a D. Il'inskaya, Nikita A. Pikhtin, N. L. Rassudov, Ilya S. Tarasov
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Abstract
We report the improved LPE regrowth prooess o InGaAsP/InP BR lasers.This method is based on the efeot o laP layers growth seleotivity. The proposed etched mesa proi1e provides the localization o! blocking p-n-junction on the mesa sidewall in the close vicinity o active layer. The mechanism responsible ror the increase of threshold current density(Jth) and the decrease o differential quantum eicienoy (ηd) in narrow (W<1Oμm) BR lasers was revealed in the set or special experiments. The modification of the rerowth process allowed to improve the lasing characteristics and to achieve 160 mW single-lobe output.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Ovchinnikov, Igor E. Berishev, Dmitry Z. Garbuzov, Yu V. Ipyin, Natal'a D. Il'inskaya, Nikita A. Pikhtin, N. L. Rassudov, and Ilya S. Tarasov "Improved LPE regrowth process of high-power InGaAsP/InP single-lobe operation BH lasers", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59163
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KEYWORDS
Semiconductor lasers

Liquid phase epitaxy

Etching

Semiconducting wafers

Technologies and applications

Heat treatments

Laser damage threshold

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