InGaAs/GaAs/InGaP strained-layer-quantum-well lasers grown by gas-source molecular beam epitaxy

Jenn-Ming Kuo; Ming C. Wu; Young-Kai Chen; M. A. Chin; A. Michael Sergent

doi:10.1117/12.59167

26 June 1992 InGaAs/GaAs/InGaP strained-layer quantum-well lasers grown by gas-source molecular beam epitaxy

Jenn-Ming Kuo, Ming C. Wu, Young-Kai Chen, M. A. Chin, A. Michael Sergent

Proceedings Volume 1634, Laser Diode Technology and Applications IV; (1992) https://doi.org/10.1117/12.59167
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

Aluminum-free In_O.2Ga_0.8As/GaAs/In_0.49Ga_0.5l P strained-layer-quantum-well lasers are grown by gas-source molecular beam epitaxy (GSMBE) for the first time. Ridge waveguide lasers of 3 p.m width show 1.0 im lasing wavelength at room temperature under continuous wave (CW) conditions and have low threshold currents (7 mA and 12 mA for 254 p.m and 508 jim-long cavity, respectively), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW). High temperature CW operation has been demonstrated up to 185°C, which is comparable to the best result (200°C) reported for the InGaAs/GaAs/AlGaAs lasers. Self-align index guided InGaAs/GaAsIInGaP lasers are also fabricated using GSMBE in two growth steps. Threshold current of 12 mA with an external differential quantum efficiency of 0.68 mW/mA is obtained from a 2.5 jtm x 508 tm self-aligned laser at room temperature under CW operation condition.

Citation Download Citation

Jenn-Ming Kuo, Ming C. Wu, Young-Kai Chen, M. A. Chin, and A. Michael Sergent "InGaAs/GaAs/InGaP strained-layer quantum-well lasers grown by gas-source molecular beam epitaxy", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59167

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