Charge transfer approach to negative resists

Reinhard R. Baumann; Joachim Bargon

doi:10.1117/12.59771

1 June 1992 Charge transfer approach to negative resists

Reinhard R. Baumann, Joachim Bargon

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59771
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

Three-dimensional lithographic patterns can be obtained using a new two component UV sensitive polymer system. The light-sensitive material consists of a chlorine containing conventional polymer, i.e., poly(chloroacrylonitrile) as a typical acceptor, and a heterocyclic or aromatic monomer as the donor, here pyrrole. This two component precomposite can be irradiated by either an excimer laser or the radiation of a high pressure mercury lamp. The resulting image, essentially a black and white pattern, can be developed in wet or dry (ion etching, ablation) modes giving resist patterns with a resolution in the micrometer range.

Citation Download Citation

Reinhard R. Baumann and Joachim Bargon "Charge transfer approach to negative resists", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59771

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