Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates

John Lopata; Niloy K. Dutta; William S. Hobson; Paul Raymond Berger

doi:10.1117/12.137650

2 September 1992 Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates

John Lopata, Niloy K. Dutta, William S. Hobson, Paul Raymond Berger

Author Affiliations +

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137650
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

A single-step metal organic chemical vapor deposition (MOCVD) growth has been used to fabricate a buried heterostructure InGaAs/GaAs multi-quantum well laser over a patterned GaAs substrate. The pattern used here is a re-entrant mesa formed by wet chemical etching oriented along [011] direction. Growth over the mesa results in isolated buried heterostructures. The 250 micrometers long lasers have threshold currents of 30 mA and emit > 100 mW/facet at room temperature. The external differential quantum efficiency is found to be almost independent of temperature in the temperature range of 10 degree(s)C to 90 degree(s)C which suggests a low temperature dependence of leakage current. The threshold current of the laser as a function of temperature can be represented by the usual expression I_th approximately I_o exp(T/T_o) with a characteristic temperature (T_o) of about 120 K in the temperature range 10 degree(s)C to 90 degree(s)C.

Citation Download Citation

John Lopata, Niloy K. Dutta, William S. Hobson, and Paul Raymond Berger "Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137650

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