Femtosecond dynamics of hot carriers in GaAs

Philippe M. Fauchet; Ting Gong

doi:10.1117/12.137694

21 October 1992 Femtosecond dynamics of hot carriers in GaAs

Philippe M. Fauchet, Ting Gong

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137694
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The pump-probe technique is used to perform a series of measurements on intrinsic GaAs samples at room temperature with a temporal resolution of 75 - 100 fs. Changes of both absorption coefficient and refractive index are measured over a wide spectral region (550 - 950 nm) for various carrier densities (<10¹⁶ to 10¹⁹ cm^-3) injected at 2 eV. These measurements provide insight on the fundamental properties of nonequilibrium carriers, including electron-electron scattering, electron-hole scattering, electron-phonon scattering, hole-phonon scattering, band-gap renormalization, plasma screening of Coulomb interactions, and free-carrier absorption.

Citation Download Citation

Philippe M. Fauchet and Ting Gong "Femtosecond dynamics of hot carriers in GaAs", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137694

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available