Paper
1 September 1992 Optimum barrier height in Schottky-barrier infrared CCD image sensor
Akihito Tanabe, Nobukazu Teranishi, Shigeru Tohyama, Kazuo Konuma, Kouichi Masubuchi
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Abstract
Noise equivalent temperature difference (NE(Delta) T) values in a PtSi Schottky-barrier (SB) infrared CCD image sensor are calculated with variations in spectral response, device operating temperature, and internal radiation intensity generated from a lens barrel, using measured values from a recently developed 648 X 487 pixel SB infrared CCD image sensor. The barrier height is allowed to vary, whereas it was fixed before. NE(Delta) T values were calculated as a function of barrier height and were found to have a minimum. The optimum barrier height depends on quantum efficiency coefficient, device operating temperature, and internal radiation intensity.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akihito Tanabe, Nobukazu Teranishi, Shigeru Tohyama, Kazuo Konuma, and Kouichi Masubuchi "Optimum barrier height in Schottky-barrier infrared CCD image sensor", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); https://doi.org/10.1117/12.137794
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KEYWORDS
Electrons

Quantum efficiency

Infrared radiation

Infrared sensors

Infrared imaging

Photodiodes

Staring arrays

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