Impact of interlevel dielectric materials on stress-induced voiding of metal 1

H. Z. Chew; C. A. Fieber; P. Kelley; Thiet T. Lai; Vivian Ryan

doi:10.1117/12.145470

21 May 1993 Impact of interlevel dielectric materials on stress-induced voiding of metal 1

H. Z. Chew, C. A. Fieber, P. Kelley, Thiet T. Lai, Vivian Ryan

Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145470
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Stress-induced voiding of 1.2 micrometers wide metal 1 lines is quantified for two different interlevel dielectric schemes. The first involves a multi-step sequence of PETEOS depositions and etchbacks. The second is a PETEOS/siloxane spin-on-glass/PETEOS sandwich. Metal 1 consists of 4500 angstroms of Al (0.75% Si, 0.5% Cu) over 600 angstroms of Ti/TiN. Separate experiments show the stresses in the PETEOS and SOG films are compressive and tensile, respectively. After 2000 hr. at 175 degree(s)C, metal 1 lines covered by the spin-on- glass sandwich dielectric exhibit considerably fewer voids that penetrate <EQ 30% of linewidth and a comparably low density of voids that penetrate 30 - 50% of linewidth. No voids > 50% of linewidth are observed with either dielectric scheme. This result indicates that the spin-on glass is able to reduce the net voiding stresses in the aluminum.

Citation Download Citation

H. Z. Chew, C. A. Fieber, P. Kelley, Thiet T. Lai, and Vivian Ryan "Impact of interlevel dielectric materials on stress-induced voiding of metal 1", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145470

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