Relaxation of dielectric thin films under Ar+ laser irradiation

Zhouling Wu; C. Z. Tan; J. Arndt; Zhengxiu Fan

doi:10.1117/12.147427

24 June 1993 Relaxation of dielectric thin films under Ar+ laser irradiation

Zhouling Wu, C. Z. Tan, J. Arndt, Zhengxiu Fan

Proceedings Volume 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992; (1993) https://doi.org/10.1117/12.147427
Event: Optical Materials for High Power Lasers, 1992, Boulder, CO, United States

Abstract

Ar⁺ laser irradiation can produce change, most of the time decrease, in optical absorption of various electron beam deposited (EBD) dielectric thin films. Similar phenomena were also found in bulk materials prepared under high pressure and high temperature conditions. In this paper we report our recent progress in understanding the problem by employing a relaxation function which can fit the in-situ measured time dependent change in absorption of various dielectric thin films. Results of SiO₂, TiO₂, Ta₂O₅, ZrO₂, HfO₂ films and SiO₂ bulk samples were reported and compared.

Citation Download Citation

Zhouling Wu, C. Z. Tan, J. Arndt, and Zhengxiu Fan "Relaxation of dielectric thin films under Ar+ laser irradiation", Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); https://doi.org/10.1117/12.147427

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