Paper
8 August 1993 Quarter-micron lithography using a deep-UV stepper with modified illumination
Anthony Yen, William N. Partlo, Shane R. Palmer, Maureen A. Hanratty, Michael C. Tipton
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Abstract
We have investigated the use of annular illumination on a KrF excimer laser stepper ((lambda) equals 248 nm) working near the resolution limit of the lens. The numerical aperture of the lens was 0.48 and the illuminator-lens combination produced a partial coherence of 0.44. With a central obscuration equal to 75% of the diameter of the illuminator aperture in place and using a surface-imaging resist process, we have increased the depth of focus for 0.25 micrometers dense lines and spaces from 0.9 micrometers at one point in the imaging field to 1.5 micrometers . Performance for dense contacts was also improved. These improvements demonstrate the feasibility of 0.25 micrometers technology with deep-UV lithography.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony Yen, William N. Partlo, Shane R. Palmer, Maureen A. Hanratty, and Michael C. Tipton "Quarter-micron lithography using a deep-UV stepper with modified illumination", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150421
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Lithographic illumination

Deep ultraviolet

Lithography

Photoresist processing

Excimer lasers

Fiber optic illuminators

Optical lithography

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