Applications Of Scanning Continuous Wave (CW) And Pulsed Lasers In Silicon Technology

T. W. Sigmon; J. F. Gibbons

doi:10.1117/12.958016

24 January 1980 Applications Of Scanning Continuous Wave (CW) And Pulsed Lasers In Silicon Technology

T. W. Sigmon, J. F. Gibbons

Proceedings Volume 0198, Laser Applications in Materials Processing; (1980) https://doi.org/10.1117/12.958016
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States

Abstract

Both pulsed and scanning cw lasers operating at wavelengths in the range 0.5-1.06 μm can be used as a method to rapidly heat the surface and underlying bulk of a semiconductor material to a precisely controlled temperature up to melting. As a result, lasers can be utilized to anneal ion-implanted layers, reduce fixed interface charge of deposited oxide films, grow surface oxides, react metal/silicon layers to form silicides and improve and control the electrical properties of deposited silicon films.

Citation Download Citation

T. W. Sigmon and J. F. Gibbons "Applications Of Scanning Continuous Wave (CW) And Pulsed Lasers In Silicon Technology", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); https://doi.org/10.1117/12.958016

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