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19 November 1993 Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy
G. Li, Chennupati Jagadish, Andrew Clark, C. A. Larsen, N. Hauser
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162761
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
In this paper, the influence of growth rate on the dopant confinement of silicon delta-doped GaAs epitaxial layers grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE) was studied in detail. It was found that the growth rate influences the dopant confinement of Si delta-doped GaAs layers in the case of low silane flows. In contrast, at higher silane flows, growth rate has very little effect on the carrier confinement. The Si delta-doped GaAs layers with very good confinement and high sheet carrier concentration have been achieved under optimal conditions of LP-MOVPE.
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G. Li, Chennupati Jagadish, Andrew Clark, C. A. Larsen, and N. Hauser "Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162761
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KEYWORDS
Gallium arsenide
Metals
Vapor phase epitaxy
Silicon
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