Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region

Masahito Yamaguchi; Masato Morifuji; Hitoshi Kubo; Kenji Taniguchi; Chihiro Hamaguchi; Claire F. Gmachl; Erich Gornik

doi:10.1117/12.162810

19 November 1993 Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region

Masahito Yamaguchi, Masato Morifuji, Hitoshi Kubo, Kenji Taniguchi, Chihiro Hamaguchi, Claire F. Gmachl, Erich Gornik

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162810
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 angstrom)/AlGaAs(20 angstrom) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5 eV - 2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9 eV- 2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.

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Masahito Yamaguchi, Masato Morifuji, Hitoshi Kubo, Kenji Taniguchi, Chihiro Hamaguchi, Claire F. Gmachl, and Erich Gornik "Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162810

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