Long-wavelength stacked Si1-x Gex/Si heterojunction-internal-photoemission infrared detectors

Jin Suk Park; True Lon Lin; Eric W. Jones; Hector M. Del Castillo; Thomas George; Sarath D. Gunapala

doi:10.1117/12.160539

1 November 1993 Long-wavelength stacked Si_1-x Ge_x/Si heterojunction-internal-photoemission infrared detectors

Jin Suk Park, True Lon Lin, Eric W. Jones, Hector M. Del Castillo, Thomas George, Sarath D. Gunapala

Proceedings Volume 2020, Infrared Technology XIX; (1993) https://doi.org/10.1117/12.160539
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

Utilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. The detector structure consists of several periods of degenerately boron doped thin (20 cm^-3) has been achieved and high crystalline quality multiple SiGe/Si layers have been obtained. For the experiment several stacked Si_0.7Ge_0.3/Si HIP detectors with various SiGe layer thickness and doping concentration have been fabricated. The detectors have exhibited strong infrared absorption and near ideal thermionic-emission dark current characteristics. For the stacked Si_0.7Ge_0.3/Si HIP detectors with [B] equals 4 X 10²⁰ cm^-3, strong photoresponse at wavelengths ranging 2 to 20 micrometers has been measured. The effects of doping concentration on the detector optical and electrical characteristics have been studied. Using the measured quantum efficiency and dark current data, detectivity (D_(lambda )*) of detectors has been estimated.

Citation Download Citation

Jin Suk Park, True Lon Lin, Eric W. Jones, Hector M. Del Castillo, Thomas George, and Sarath D. Gunapala "Long-wavelength stacked Si_1-x Ge_x/Si heterojunction-internal-photoemission infrared detectors", Proc. SPIE 2020, Infrared Technology XIX, (1 November 1993); https://doi.org/10.1117/12.160539

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