Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering

Fusong S. Jiang; Yu Chen; Chuanxing Zhu; Moguang Jiang; Fuxi Gan

doi:10.1117/12.150647

13 August 1993 Static and optical properties of GeTe-Sb₂Te₃ system films prepared by cosputtering

Fusong S. Jiang, Yu Chen, Chuanxing Zhu, Moguang Jiang, Fuxi Gan

Proceedings Volume 2053, Optical Storage (ISOS '92); (1993) https://doi.org/10.1117/12.150647
Event: Optical Storage: Third International Symposium, 1992, Kunming, Yunnan Province, China

Abstract

A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 10⁵ are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.

Citation Download Citation

Fusong S. Jiang, Yu Chen, Chuanxing Zhu, Moguang Jiang, and Fuxi Gan "Static and optical properties of GeTe-Sb₂Te₃ system films prepared by cosputtering", Proc. SPIE 2053, Optical Storage (ISOS '92), (13 August 1993); https://doi.org/10.1117/12.150647

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