Slurry chemistry effects during chemical-mechanical polishing of silicon oxide films

Rahul Jairath; Hubert M. Bath; Suzanne Davis; M. Desai; Kathleen A. Perry; Siva Sivaram; Allen White

doi:10.1117/12.156514

15 September 1993 Slurry chemistry effects during chemical-mechanical polishing of silicon oxide films

Rahul Jairath, Hubert M. Bath, Suzanne Davis, M. Desai, Kathleen A. Perry, Siva Sivaram, Allen White

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156514
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Chemical mechanical polishing (CMP) has emerged as the favored technique for meeting the global planarity requirements of sub-half micron technology. Typically, the slurry used to polish oxide films consists of fine (< 0.5 micron) silica particles dispersed in an alkaline medium such as hydroxides of potassium or ammonia. However, past work on polishing of bulk glass has revealed that compared to silica, oxides of metals such as cerium and aluminum are more chemically active and make more efficient polishing compounds. In this work, we have compared polishing characteristics of oxide films using silica, ceria and alumina slurries. Transmission electron microscopy (TEM) has been used to characterize these different slurries. In addition, the films polished using these slurries have been characterized using various techniques. Consistent with their increased chemical reactivity, ceria based slurries result in increased removal rates for polishing of blanket oxide films. Polishing characteristics of alumina based slurries appear to be a strong function of essential slurry additives.

Citation Download Citation

Rahul Jairath, Hubert M. Bath, Suzanne Davis, M. Desai, Kathleen A. Perry, Siva Sivaram, and Allen White "Slurry chemistry effects during chemical-mechanical polishing of silicon oxide films", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156514

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