Paper
1 May 1994 Process control for 0.25 um GaAs microwave monolithic integrated circuits
Rick D. Hudgens, Shirley Meyers, Bret A. Small, Keith Salzman, David Rhine, Randy Class
Author Affiliations +
Abstract
Gallium arsenide metal semiconductor field effect transistors (GaAs MESFETs) are used in analog microwave monolithic integrated circuits (MMICs) because of their high frequency response. Common applications for MMICs include low noise and power amplifiers for use in satellite communication and missile guidance systems. The performance of MESFETs is improved with smaller gate lengths, but to consistently achieve the highest performance, control methods must be in place for the critical processes. Gate length control is the key parameter in maintaining the rf performance and a lack of gate pinch off is the major yield loss category. This paper describes the process and the tools that Texas Instruments uses to monitor the critical parameters. It also describes the control methods and reviews the major contributors to variations in the process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rick D. Hudgens, Shirley Meyers, Bret A. Small, Keith Salzman, David Rhine, and Randy Class "Process control for 0.25 um GaAs microwave monolithic integrated circuits", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174130
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium arsenide

Integrated circuits

Microwave radiation

Process control

Field effect transistors

Amplifiers

Analog electronics

Back to Top